Electronic nanolithography as a basic nanoavionics technology

Electronic nanolithography as a basic nanoavionics technology

Nikolai I. Plyusnin
Doctor of Physical and Mathematical Sciences, Associate Professor, Federal State Military Educational Institution of Higher Education «Military Orders of Zhukov and Lenin Red Banner Academy of Communications named after Marshal of the Soviet Union S.M. Budyonny» of the Ministry of Defense of the Russian Federation, Senior Research Scientist, 3, Tikhoretsky pr., Saint Petersburg, 194064, Russia, This email address is being protected from spambots. You need JavaScript enabled to view it.

Received December 5, 2023

Abstract
The need for further development of electronic components of aviation and rocket-space information and communication systems towards nanoelectronics brings nanolithography to the forefront as its basic technology. A promising nanolithography method is electron nanolithography (ENL). Advantages of ENL: 1) potential resolution - less than 2 nm, 2) possibility of direct recording without the use of masks, 3) possibility of using standard film resistors, 4) low density of defects in circuits, 5) controllability using electric and magnetic fields, 6) possibility use of ready-made industrial installations (microscopes, lithographs for masks). This review examines the principles of construction, the history of creation and the current state of ENL, with an emphasis on its features, as well as its classification and stages of development. In addition, one of the main problems of ENL that requires a solution is considered – the development of special electronic resists and methods for increasing their resolution and sensitivity.

Key words
Aviation nanoelectronics, element base, integrated circuits, electron beam nanolithography, resolution, resists.

DOI
10.31776/RTCJ.12302

Bibliographic description
Plyusnin, N.I. (2024), "Electronic nanolithography as a basic nanoavionics technology", Robotics and Technical Cybernetics, vol. 12, no. 3, pp. 173-183, DOI: 10.31776/RTCJ.12302. (in Russian).

UDC identifier
621.382

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